Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
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1. Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux;physica status solidi (a);2022-01-27
2. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes;Light: Science & Applications;2021-06-16
3. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
4. Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN;Optics Express;2014-03-19
5. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy;Applied Physics Letters;2011-11-14
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