Monolayer‐Range Compositional Modulations in Al x Ga 1− x N ( x = 0.6–0.75) Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux-Reference-Cited by-同舟云学术

Monolayer‐Range Compositional Modulations in Al _x Ga _{1−
x} N _{(
x
= 0.6–0.75)} Layers Grown Using Plasma‐Assisted Molecular Beam Epitaxy under Me‐Rich Conditions with an Off‐Centered Spatial Distribution of Activated Nitrogen Flux

Published:2022-01-27 Issue:6 Volume:219 Page:2100550
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Jmerik Valentin¹^ORCID,Nechaev Dmitrii¹,Yagovkina Maria¹,Sitnikova Alla¹,Troshkov Sergey¹,Rzheutski Mikalai²,Lutsenko Eugenii²,Rouvimov Sergei¹³

Affiliation:

1. Centre of Nanoheterostructure Physics Ioffe Institute Polytekhnicheskaya, 26 Saint Petersburg 194021 Russia

2. Centre of Semiconductor Technologies and Lasers Stepanov Institute of Physics National Academy of Sciences of Belarus Independence Ave. 68 220072 Minsk Belarus

3. Department of Electrical Engineering University of Notre Dame Notre Dame 46556 IN USA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202100550

Reference62 articles.

1. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

2. Microstructures produced during the epitaxial growth of InGaN alloys

3. Strong phase separation of strained InxGa1−xN layers due to spinodal and binodal decomposition: Formation of stable quantum dots

4. Unlocking the origin of compositional fluctuations in InGaN light emitting diodes

5. Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

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