Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658734
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1. Advances in group III-nitride-based deep UV light-emitting diode technology
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4. Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers
5. Tensile Strain Introduced in AlN Layer Grown by Metal-Organic Vapor-Phase Epitaxy on (0001) 6H-SiC with (GaN/AlN) Buffer
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1. Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes;Light: Science & Applications;2021-06-16
2. Defects in AIN/GaN Superlattice: First Principle Calculations;Journal of Nanoscience and Nanotechnology;2016-01-01
3. AlN/GaN Distributed Bragg Reflectors Grown via Metal Organic Vapor Phase Epitaxy using GaN Insertion Layers;MRS Proceedings;2012
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