Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN-Reference-Cited by-同舟云学术

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Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN

Published:2014-03-19 Issue:S3 Volume:22 Page:A633
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Yu Chun-Ta,Lai Wei-Chih,Yen Cheng-Hsiung,Hsu Hsu-Cheng,Chang Shoou-Jinn

Funder

National Science Council Taiwan (NSC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference33 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN-GaN multiquantum-well blue and green light-emitting diodes

3. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

4. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

5. Recent progress of nitride-based light emitting devices

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1. Growth modification via indium surfactant for InGaN/GaN green LED;Semiconductor Science and Technology;2023-02-17

2. Limiting factors of GaN-on-GaN LED;Semiconductor Science and Technology;2021-08-20

3. Dilute-antimonide GaSbN/GaN dots-in-wire heterostructures grown by molecular beam epitaxy: Structural and optical properties;Applied Physics Letters;2021-01-04

4. Hydrogen-Free Epitaxy of Colored LEDs Based on InGaN/GaN MQWs;Acta Physica Polonica A;2019-04

5. The influence of well thickness on the photoluminescence properties of blue-violet light emitting InGaN/GaN multiple quantum wells;Superlattices and Microstructures;2018-01

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