Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors

Published:2007-12-03 Issue:23 Volume:91 Page:232114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chu-Kung B. F.,Wu C. H.,Walter G.,Feng M.,Holonyak N.,Chung T.,Ryou J.-H.,Dupuis R. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2821380

Reference23 articles.

1. Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications

2. S. Singhal, A. W. Hanson, A. Chaudhari, P. Rajagopal, T. Li, J. W. Johnson, W. Nagy, R. Therrien, C. Park, A. P. Edwards, E. L. Piner, K. J. Linthicum, and I. C. Kizilyalli, Compound Semiconductor Mantech Digest of Papers 2007, 83 (2007).

3. AlGaN/GaN heterojunction bipolar transistor

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