AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance
Author:
Affiliation:
1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
2. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China
Funder
CAS Project for Young Scientists in Basic Research
Science Challenge Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09940266.pdf?arnumber=9940266
Reference21 articles.
1. Working toward high-power GaN/InGaN heterojunction bipolar transistors
2. Bipolar III-N high-power electronic devices
3. Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors
4. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact
5. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2
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1. Aluminum Gallium Nitride Power Heterojunction Bipolar Transistor Regimes for Power Electronics;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01
2. Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current;Electronics;2023-08-25
3. GaN/Gr (2D)/Si (3D) Combined High-Performance Hot Electron Transistors;ACS Nano;2023-05-01
4. GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base;IEEE Transactions on Electron Devices;2023-04
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