AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance-Reference-Cited by-同舟云学术

AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance

Author:

Zhang Lian¹^ORCID,Wang Xinyuan¹,Zeng Jianping²^ORCID,Jia Lifang¹^ORCID,Cheng Zhe¹^ORCID,Ai Yujie¹,Liu Zhe¹^ORCID,Tan Wei²,Zhang Yun¹

Affiliation:

1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

2. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China

Funder

CAS Project for Young Scientists in Basic Research

Science Challenge Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference21 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

4. Aluminum Gallium Nitride Power Heterojunction Bipolar Transistor Regimes for Power Electronics;2023 1st International Conference on Circuits, Power and Intelligent Systems (CCPIS);2023-09-01