Working toward high-power GaN/InGaN heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Working toward high-power GaN/InGaN heterojunction bipolar transistors

Published:2013-06-21 Issue:7 Volume:28 Page:074025
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Shen Shyh-Chiang,Dupuis Russell D,Lochner Zachery,Lee Yi-Che,Kao Tsung-Ting,Zhang Yun,Kim Hee-Jin,Ryou Jae-Hyun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/28/i=7/a=074025/pdf

Reference27 articles.

1. High performance pnp AlGaN∕GaN heterojunction bipolar transistors on GaN substrates

2. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm2)

3. High-temperature characteristics up to 590 °C of a pnp AlGaN/GaN heterojunction bipolar transistor

4. High current gain InGaN/GaN HBTs with 300°C operating temperature

5. Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current;Electronics;2023-08-25

2. GaN-Based Double-Heterojunction Bipolar Transistors With a Composition Graded p-InGaN Base;IEEE Transactions on Electron Devices;2023-04

3. Numerical study and design of high-efficiency p-In0.1Ga0.9N/i-GaN/n-GaN heterojunction photodiode;Micro and Nanostructures;2023-03

4. AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific on-Resistance;IEEE Transactions on Electron Devices;2022-12

5. Progress and prospects of III-nitride optoelectronic devices adopting lift-off processes;Journal of Applied Physics;2022-08-14

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