High-temperature characteristics up to 590 °C of a pnp AlGaN/GaN heterojunction bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3001799
Reference24 articles.
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5. Proceedings of the 25th International Symposium on Compound Semiconductors;McCarthy L. S.,1998
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