Barrier-Layer Scaling of InAlN/GaN HEMTs-Reference-Cited by-同舟云学术

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Barrier-Layer Scaling of InAlN/GaN HEMTs

Published:2008-05 Issue:5 Volume:29 Page:422-425
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Medjdoub F.,Alomari M.,Carlin J.-F.,Gonschorek M.,Feltin E.,Py M.A.,Grandjean N.,Kohn E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4494611/04481215.pdf?arnumber=4481215

Cited by 111 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment;Microsystem Technologies;2024-07-25

2. Impact of barrier layer thickness on DC and RF performance of AlGaN/GaN high electron mobility transistors;Applied Physics A;2023-07-19

3. The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga₂O₃ Nano-HEMT;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

4. GaN-Based Lateral and Vertical Devices;Springer Handbook of Semiconductor Devices;2022-11-11

5. Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment;Crystals;2022-10-26

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