The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga<sub>2</sub>O<sub>3</sub> Nano-HEMT-Reference-Cited by-同舟云学术

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The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga₂O₃ Nano-HEMT

Published:2022-11-26 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
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Author:

Rao G. Purnachandra¹,Baruah Nistha¹,Lenka Trupti Ranjan¹,Singh Rajan²,Boukortt Nour El. I.³,Nguyen Hieu Pham Trung⁴

Affiliation:

1. National Institute of Technology,Dept. of E.C.E,Silchar,Assam,India,788010

2. MLR Institute of Technology,Dept. of E.C.E,Hyderabad,Telangana,India,500043

3. Kuwait College of Science and Tech,Dept. of E.C.E,Doha,Kuwait

4. New Jersey Institute of Tech,Dept. of Electrical and Computer Engg,Newark,NJ,USA,07102

Funder

Science and Engineering Research Board

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032868.pdf?arnumber=10032868

Reference34 articles.

1. A review of InP/InAlAs/InGaAs based transistors for high frequency applications

2. Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

3. Influence of AlGaN and InGaN Back Barriers on the Performance of AlGaN/GaN HEMT

4. An Intensive Study on Assorted Substrates Suitable for High JFOM AlGaN/GaN HEMT

5. Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

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1. Linearity analysis of III-Nitride/β-Ga2O3 Nano-HEMT for emerging RF/Microwave applications;Microsystem Technologies;2024-08-28

2. An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT;Nanoelectronic Devices and Applications;2024-06-26

3. Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models;Nanoelectronic Devices and Applications;2024-06-26

4. A Comprehensive Study on High Electron Mobility Transistors;Nanoelectronic Devices and Applications;2024-06-26

5. Characteristics study of heterojunction III-nitride/β-Ga₂O₃ nano-HEMT for THz applications;Engineering Research Express;2024-04-24

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