Numerical study and design of high-efficiency p-In0.1Ga0.9N/i-GaN/n-GaN heterojunction photodiode

Author:

Saidani Okba,Tobbeche Souad

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference50 articles.

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2. Achieving uniform carrier distribution in MBE-grown compositionally graded InGaN multiple-quantum-well LEDs;Mishra;IEEE Photon. J.,2015

3. Monolithic integration of GaN-on-Sapphire light-emitting diodes, photodetectors, and waveguides;Li;IEEE J. Sel. Top. Quant. Electron.,2018

4. InGaN solar cells: present state of the art and important challenges;Bhuiyan;IEEE J. Photovoltaics,2012

5. High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN;Parish;Appl. Phys. Lett.,1999

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