High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2198092
Reference15 articles.
1. Electric breakdown in GaN p‐n junctions
2. Performance evaluation of high-power wide band-gap semiconductor rectifiers
3. High voltage (450 V) GaN Schottky rectifiers
4. Growth and characterization of GaN PiN rectifiers on free-standing GaN
5. Current-voltage characteristics of p‐InGaN∕n‐GaN vertical conducting diodes on n+‐SiC substrates
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