Reduced damage of electron cyclotron resonance etching by In doping into p-GaN-Reference-Cited by-同舟云学术

Reduced damage of electron cyclotron resonance etching by In doping into p-GaN

Published:2000-12 Issue:1-4 Volume:221 Page:350-355
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Makimoto Toshiki,Kumakura Kazuhide,Kobayashi Naoki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. S.J. Pearton, R.J. Shul, in: J.I. Penkove, T.D. Moustakas (Eds.), Wet and Dry Etching of GaN, Academic Press, New York, 1998, in GaN I.

2. L.S. McCarthy, P. Kozodoy, S.P. Denbaars, M. Rodwell, U.K. Mishra, 25th International Symposium on Compound Semiconductors, We2A-1, Nara, Japan, October 1998.

3. 300°C GaN/AlGaN Heterojunction Bipolar Transistor

4. Dislocation-free GaAs and InP crystals by isoelectronic doping

5. Effects of indium lattice hardening upon the growth and structural properties of large‐diameter, semi‐insulating GaAs crystals

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