High hole concentrations in Mg-doped InGaN grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Shortest wavelength semiconductor laser diode
3. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
4. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
5. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
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