Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate-Reference-Cited by-同舟云学术

Ultra‐Steep‐Slope High‐Gain MoS ₂ Transistors with Atomic Threshold‐Switching Gate

Published:2022-01-17 Issue:8 Volume:9 Page:2104439
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Lin Jun¹,Chen Xiaozhang²^ORCID,Duan Xinpei¹,Yu Zhiming¹,Niu Wencheng¹,Zhang Mingliang¹,Liu Chang¹,Li Guoli¹,Liu Yuan¹,Liu Xingqiang¹,Zhou Peng²,Liao Lei¹³^ORCID

Affiliation:

1. Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education& Hunan Provincial Key Laboratory of Low‐Dimensional Structural Physics and Devices School of Physics and Electronics Hunan University Changsha 410082 China

2. State Key Laboratory of ASIC and System Department of Microelectronics Fudan University Shanghai 200433 P. R. China

3. College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202104439

Reference31 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches

2. High-current MoS2 transistors with non-planar gate configuration

3. Reducing the power consumption of two-dimensional logic transistors

4. Two-dimensional semiconductors for transistors

5. Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

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