All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope

Author:

Hu Jiayang12,Li Hanxi12ORCID,Chen Anzhe12,Zhang Yishu12,Wang Hailiang12,Fu Yu3,Zhou Xin4ORCID,Loh Kian Ping4ORCID,Kang Yu12,Chai Jian12,Wang Chenhao5,Zhou Jiachao12ORCID,Miao Jialei12,Zhao Yuda12ORCID,Zhong Shuai6ORCID,Zhao Rong6,Liu Kaihui3ORCID,Xu Yang12,Yu Bin12ORCID

Affiliation:

1. College of Integrated Circuits, Zhejiang University, Hangzhou, Zhejiang 311200, China

2. ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China

3. State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China

4. Department of Chemistry, National University of Singapore, Singapore 117543, Singapore

5. School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China

6. Department of Precision Instruments, Tsinghua University, Beijing 100084, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Excellent Young Scientists Fund

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

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