Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects-Reference-Cited by-同舟云学术

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Published:2020-04-15 Issue:5 Volume:20 Page:3255-3262
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Saeidi Ali¹^ORCID,Rosca Teodor¹,Memisevic Elvedin²,Stolichnov Igor¹^ORCID,Cavalieri Matteo¹^ORCID,Wernersson Lars-Erik²,Ionescu Adrian M.¹

Affiliation:

1. Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland

2. Lund University, Lund, Sweden

Funder

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b05356

Reference42 articles.

1. Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

2. Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits

3. Tunnel field-effect transistors as energy-efficient electronic switches

4. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

5. Double Gate Tunnel FET with ultrathin silicon body and high-k gate dielectric

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