MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN
Author:
Affiliation:
1. Institute of Solid State Physics, Technische Universität Berlin; Hardenbergstraße 36, 10623 Berlin Germany
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Nitride emitters go nonpolar
2. High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate
3. High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
4. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
5. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
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1. Growth and Doping of Group III ‐Nitride Devices;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18
2. The influence of high-temperature nitridation process on the crystalline quality of semipolar (112‾2) GaN epitaxial films;Current Applied Physics;2022-07
3. Growth of lattice-relaxed InGaN thick films on patterned sapphire substrates by tri-halide vapor phase epitaxy;Japanese Journal of Applied Physics;2021-09-09
4. Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode;Advanced Engineering Materials;2021-04-08
5. Indium incorporation in semipolar (202̅1) and nonpolar (101̅0) InGaN grown by plasma assisted molecular beam epitaxy;Journal of Crystal Growth;2017-02
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