High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate-Reference-Cited by-同舟云学术

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High power and high efficiency green light emitting diode on free-standing semipolar (112) bulk GaN substrate

Published:2007-07 Issue:4 Volume:1 Page:162-164
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Sato Hitoshi,Tyagi Anurag,Zhong Hong,Fellows Natalie,Chung Roy B.,Saito Makoto,Fujito Kenji,Speck James S.,DenBaars Steven P.,Nakamura Shuji

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Reference22 articles.

1. and , The Blue Laser Diode (Springer, Heidelberg, 1997).

2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

3. The role of piezoelectric fields in GaN-based quantum wells

4. Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences

5. Strain-induced polarization in wurtzite III-nitride semipolar layers

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