Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films-Reference-Cited by-同舟云学术

Influence of MO-GaN templates on the HVPE growth of semi-polar GaN thick films

Author:

Zhang Lin¹²³⁴⁵^ORCID,Wu Jiejun¹²³⁴⁵,Han Tong¹²³⁴⁵,Liu Fang⁶³⁴⁵⁷,Li Mengda¹²³⁴⁵,Zhu Xingyu¹²³⁴⁵,Zhao Qiyue¹²³⁴⁵,Yu Tongjun¹²³⁴⁵^ORCID

Affiliation:

1. Research Center for Wide-gap Semiconductors

2. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics

3. School of Physics

4. Peking University

5. Beijing 100871

6. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics

7. P. R. China

Abstract

This work illustrates the influence of MO-templates and competition mechanism on the HVPE growth of semi-polar GaN (11−22) & (10−13) thick layers.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference21 articles.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献