Abstract
Introducing polyhedral facets into a high surface-to-volume nanowire structure (i.e., serrate-shaped or screw thread-like nanowire) is an effective way for boosting the photoelectrochemical (PEC) activity. However, fabricating such nanowires with serrated surfaces remains a challenge because it usually involves many complex processes, thus limiting mass activity. Here, we demonstrate a strategy for natural growth of the serrated GaN nanowires on a LiGaO2 substrate by using an Au catalyst-assisted vapor-liquid-solid (VLS) method. The specific GaN nanowire grew through an atypical growth mechanism due to the partial deformation of the Au catalyst. The serrated GaN nanowire exhibited a higher photocurrent density of 0.391 mA cm−2 at 1.23 V versus RHE, which was approximately 2.3 times that of the GaN film (0.157 mA cm−2). The high stability of the photoresponse and photocurrent of the serrated nanowire was verified in a wide angle-dependent illumination. This work opens a new way for strengthening the PEC performance of the GaN-based photoanodes by introducing serrate-shaped surfaces on the GaN nanowires.
Funder
National Natural Science Foundation of China
Publisher
The Electrochemical Society
Subject
Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials