Growth and Doping of Group III ‐Nitride Devices
Author:
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/9781119708681.ch3
Reference42 articles.
1. Abnormal Stranski–Krastanov mode growth of green InGaN quantum dots: morphology, optical properties, and applications in light‐emitting devices;Wang J.;Appl. Mater. Interfaces,2018
2. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy
3. Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer
4. Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
5. Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature
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