Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
Author:
Affiliation:
1. Department of Electrical and Computer Engineering (ECE), University of California, Santa Barbara, California 93106, USA
2. Materials Department, University of California, Santa Barbara, California 93106, USA
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Defense Advanced Research Projects Agency
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0064755
Reference23 articles.
1. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes
2. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs
3. AlGaInP Red LEDs with Hollow Hemispherical Polystyrene Arrays
4. 1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions
5. Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes
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