Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective-Reference-Cited by-同舟云学术

Advances in InGaN-based RGB micro-light-emitting diodes for AR applications: Status and perspective

Published:2024-08-01 Issue:8 Volume:12 Page:
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:

Author:

Li Panpan¹^ORCID,Ewing Jacob¹^ORCID,Wong Matthew S.¹,Yao Yifan¹^ORCID,Li Hongjian¹^ORCID,Gandrothula Srinivas¹^ORCID,Smith Jordan M.¹^ORCID,Iza Mike¹^ORCID,Nakamura Shuji¹²^ORCID,DenBaars Steven P.¹²^ORCID

Affiliation:

1. Materials Department, University of California 1 , Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara, California 93106, USA

Abstract

Micro-light-emitting diodes (µLEDs) are gathering significant interest as a technology for emerging micro-displays. However, µLEDs encounter numerous obstacles, including size-dependent efficiency loss, poor efficiency of red µLEDs, and challenges associated with the mass transfer and integration of full-color µLEDs. These issues become more acute in ultra-small µLEDs (<5 µm), which were required by the augmented reality (AR) displays. Here, we discuss the principal challenges faced by µLEDs and explore the possible solutions. We highlight recent advances in InGaN-based RGB µLEDs tailored for AR displays. In particular, we discuss the advancements in ultra-small InGaN µLEDs scaled down to 1 µm, the developments in InGaN red µLEDs, and the implementation of tunnel junction-based cascaded InGaN µLEDs for monolithic integration.

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0222618/20110180/080901_1_5.0222618.pdf

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