1.4× efficiency improvement in transparent-substrate (AlxGa1−x)0.5In0.5P light-emitting diodes with thin (⩽2000 Å) active regions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123810
Reference7 articles.
1. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
2. Wafer bonding of 50‐mm diameter GaP to AlGaInP‐GaP light‐emitting diode wafers
3. Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes
4. Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer
5. High performance AlGaInP visible light‐emitting diodes
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