Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes-Reference-Cited by-同舟云学术

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Highly reliable and efficient semiconductor wafer-bonded AlGaInP/GaP light-emitting diodes

Published:1996 Issue:2 Volume:32 Page:132
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Kish F.A.,Vanderwater D.A.,DeFevere D.C.,Steigerwald D.A.,Hofler G.E.,Park K.G.,Steranka F.M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19960098?crawler=true&mimetype=application/pdf

Reference8 articles.

1. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Antypas, G.A., and Kinter, M.A.: ‘III-V Photocathode bonded to a foreign transparent substrate’, USA, (3,769,536)

4. Low‐resistance Ohmic conduction across compound semiconductor wafer‐bonded interfaces

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2. Analysis of the Use of Reflectors and Reflective Surfaces for Increasing the Light Efficiency of LEDs Based on AlGaInP Heterostructures;Materials Science Forum;2019-01

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