Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode-Reference-Cited by-同舟云学术

Strain‐Modulated Light Emission Properties in a Single InGaN/GaN Multiple‐Quantum‐Well Microwire‐Based Flexible Light‐Emitting Diode

Published:2021-04-08 Issue: Volume: Page:2001430
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv. Eng. Mater.

Author:

Luo Xingjun¹,Song Weidong²,Gao Fangliang¹,Shi Jiang¹,Cheng Chuan¹,Guo Jiaqi¹,He Longfei¹,Liu Qing¹,Yang Yuqing¹,Li Shuti¹^ORCID,Wu Qibao³

Affiliation:

1. Institute of Semiconductors Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices South China Normal University Guangzhou 510631 China

2. College of Applied Physics and Materials Wuyi University 22 Dongcheng Village Jiangmen 529020 China

3. School of Intelligent Manufacturing and Equipment Shenzhen Institute of Information Technology Shenzhen 518172 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202001430

Reference33 articles.

1. Wide Bandgap III-Nitride Nanomembranes for Optoelectronic Applications

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