Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells-Reference-Cited by-同舟云学术

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Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Published:2012-01-19 Issue:2 Volume:27 Page:024014
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Wernicke Tim,Schade Lukas,Netzel Carsten,Rass Jens,Hoffmann Veit,Ploch Simon,Knauer Arne,Weyers Markus,Schwarz Ulrich,Kneissl Michael

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Nitride emitters go nonpolar

2. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

3. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells

4. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

5. Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

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