The influence of high-temperature nitridation process on the crystalline quality of semipolar <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mrow><mml:mo stretchy="false">(</mml:mo><mml:mn>11</mml:mn><mml:mover accent="true"><mml:mn>2</mml:mn><mml:mo>‾</mml:mo></mml:mover><mml:mn>2</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:math> GaN epitaxial films-Reference-Cited by-同舟云学术

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The influence of high-temperature nitridation process on the crystalline quality of semipolar (112‾2) GaN epitaxial films

Published:2022-07 Issue: Volume:39 Page:38-44
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Li Wenlong,Wang Lianshan^ORCID,Chai Ruohao,Wen Ling,Lu Haixia,Wang Huanhua,Yang Shaoyan,Sun Wenhong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference43 articles.

1. NItride-based semiconductors for blue and green light-emitting devices;Ponce;Nature,1997

2. InxGa(1−x)N/InyGa(1−y)N superlattices grown on GaN films;Nakamura;J. Appl. Phys.,1993

3. Strain-induced polarization in wurtzite III-nitride semipolar layers;Romanov;J. Appl. Phys.,2006

4. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells;Zhao;Appl. Phys. Lett.,2012

5. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells;Wernicke;Semicond. Sci. Technol.,2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

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