Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells-Reference-Cited by-同舟云学术

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Published:2012-05-14 Issue:20 Volume:100 Page:201108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhao Yuji,Yan Qimin,Huang Chia-Yen,Huang Shih-Chieh,Shan Hsu Po,Tanaka Shinichi,Pan Chih-Chien,Kawaguchi Yoshinobu,Fujito Kenji,Van de Walle Chris G.,Speck James S.,DenBaars Steven P.,Nakamura Shuji,Feezell Daniel

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4719100

Reference30 articles.

1. Current Status of GaN-Based Solid-State Lighting

2. High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

3. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

4. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

5. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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