TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells-Reference-Cited by-同舟云学术

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TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells

Published:2024-05 Issue:3 Volume:14 Page:450-458
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Nicoletto Marco¹^ORCID,Caria Alessandro¹^ORCID,De Santi Carlo¹^ORCID,Buffolo Matteo¹^ORCID,Alasio Matteo G.C.²^ORCID,Mercinelli Francesco²^ORCID,Huang Xuanqui³^ORCID,Fu Houqiang³^ORCID,Chen Hong³^ORCID,Zhao Yuji³^ORCID,Meneghesso Gaudenzio¹^ORCID,Zanoni Enrico¹^ORCID,Meneghini Matteo¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padova, Padova, Italy

2. Department of Electronics and Telecommunications, Politecnico di Torino, Torino, Italy

3. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/5503869/10506739/10473022.pdf?arnumber=10473022

Reference66 articles.

1. Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect

2. InGaN/GaN multi‐quantum‐well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal‐photovoltaic power plants

3. GaN-Based Laser Wireless Power Transfer System

4. InGaN-based solar cells for space applications

5. Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

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