InGaN-based solar cells for space applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8039346/8052834/08053083.pdf?arnumber=8053083
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells;IEEE Journal of Photovoltaics;2024-05
2. Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs;Gallium Nitride Materials and Devices XIX;2024-03-08
3. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03
4. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2023-11
5. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance;IEEE Transactions on Electron Devices;2023-07
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