Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs-Reference-Cited by-同舟云学术

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Influence of V-pits on the electro-optical properties of high-periodicity InGaN MQWs

Published:2024-03-08 Issue: Volume: Page:56
ISSN:
Container-title:Gallium Nitride Materials and Devices XIX
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Author:

Nicoletto Marco,Caria Alessandro,Rampazzo Fabiana,De Santi Carlo,Buffolo Matteo,Mura Giovanna,Rossi Francesca,Huang Xuanqi,Fu Houqiang,Chen Hong,Zhao Yuji,Meneghesso Gaudenzio,Zanoni Enrico,Meneghini Matteo

Publisher

SPIE

Reference37 articles.

1. InGaN/GaN multi‐quantum‐well solar cells under high solar concentration and elevated temperatures for hybrid solar thermal‐photovoltaic power plants

2. Enhanced photocurrent in InGaN/GaN MQWs solar cells by coupling plasmonic with piezo-phototronic effect

3. InGaN-based solar cells for space applications

4. GaN-Based Laser Wireless Power Transfer System

5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

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