Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells
Author:
Affiliation:
1. Department of Information Engineering, University of Padova, Padova, Italy
2. University of Cagliari, Cagliari, Italy
3. CNR IMEM, Parma, Italy
4. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ, USA
Funder
European Union – Next Generation EU
National Recovery and Resilience Plan
Arizona State University and Rice University
ULTRA
Energy Frontier Research Center
U.S. Department of Energy
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/5503869/10309876/10252136-aam.pdf
Reference50 articles.
1. Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
2. Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
3. Light-Emitting V-Pits: An Alternative Approach toward Luminescent Indium-Rich InGaN Quantum Dots
4. Carrier localization in the vicinity of dislocations in InGaN
5. Pit formation in GaInN quantum wells
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