Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122229
Reference5 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
4. Phase separation in InGaN grown by metalorganic chemical vapor deposition
5. Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
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1. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29
2. Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls;ACS Applied Optical Materials;2024-01-02
3. Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs;Applied Physics Letters;2023-11-13
4. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2023-11
5. Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation;Journal of Applied Physics;2023-10-10
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