Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes-Reference-Cited by-同舟云学术

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Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes

Published:1997-06-02 Issue:22 Volume:70 Page:2978-2980
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun C. J.,Zubair Anwar M.,Chen Q.,Yang J. W.,Asif Khan M.,Shur M. S.,Bykhovski A. D.,Liliental-Weber Z.,Kisielowski C.,Smith M.,Lin J. Y.,Jiang H. X.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118762

Reference10 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Surface‐mode stimulated emission from optically pumped GaInN at room temperature

3. Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire

4. Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

5. Photoluminescence study of high quality InGaN–GaN single heterojunctions

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