Pit formation in GaInN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120853
Reference9 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
4. Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
5. Formation Mechanism of Nanotubes in GaN
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