Harsh photovoltaics using InGaN/GaN multiple quantum well schemes-Reference-Cited by-同舟云学术

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Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Published:2015-01 Issue: Volume:11 Page:104-109
ISSN:2211-2855
Container-title:Nano Energy
language:en
Short-container-title:Nano Energy

Author:

Lien Der-Hsien,Hsiao Yu-Hsuan,Yang Shih-Guo,Tsai Meng-Lin,Wei Tzu-Chiao,Lee Si-Chen,He Jr-Hau

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Materials Science,Renewable Energy, Sustainability and the Environment

Reference34 articles.

1. Resistive Memory for Harsh Electronics: Immunity to Surface Effect and High Corrosion Resistance via Surface Modification

2. Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments

3. Towards Self-Powered Nanosystems: From Nanogenerators to Nanopiezotronics

4. Power-generating shoe insole based on triboelectric nanogenerators for self-powered consumer electronics

5. Triboelectric nanogenerator built inside clothes for self-powered glucose biosensors

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1. Atomic Structure and Electronic Properties of Pristine and O-Doped Basal-Plane Inversion Domain Boundaries in AlN;The Journal of Physical Chemistry C;2024-07-29

2. TCAD Modeling and Simulation of Dark Current-Voltage Characteristics in High-Periodicity InGaN/GaN Multiple-Quantum-Wells (MQWs) Solar Cells;IEEE Journal of Photovoltaics;2024-05

3. Transfer of III-nitride epitaxial layers onto pre-patterned silicon substrates for the simple fabrication of free-standing MEMS;Applied Physics Letters;2024-03-04

4. InGaN based Schottky barrier solar cell: Study of the temperature dependence of electrical characteristics;Materials Science in Semiconductor Processing;2024-03

5. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2023-11

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