The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode

Abstract

This article presents the effect of aluminium nitride (AlN) epilayer (EPL) growth rate on the growth of semipolar (11–22) InGaN/GaN light emitting diode (LED). Three samples are grown with different AlN EPL growth rates, which are low (L1, 1.0 nm s−1), intermediate (L2, 1.3 nm s−1), and high (L3, 1.6 nm s−1) growth rate. The root‐mean‐square (RMS) and peak‐to‐valley roughness show an increasing trend with the increasing AlN EPL growth rate which is attributed to an increment in indium composition as justified by the photoluminescence results. The sample with AlN EPL growth rate of 1.3 nm s−1 (L2) exhibits an outstanding crystal quality in terms of defect densities reduction, with a minimum basal stacking fault density of 1.60 × 104 cm−1 as calculated. Besides that, the obvious fringes of InGaN/GaN peaks observed in 2θ−ω scan proves that a high abruptness multi‐quantum well is attained. Sample L2 also shows a single peak profile in both photoluminescence and electroluminescence spectra with green wavelength emission of 506 and 537 nm, respectively, indicating a homogeneous indium composition. As the injection current is swept from 5 to 40 mA for sample L2, a weak blueshift of ≈6 nm is observed which indicates a reduction in quantum‐confined Stark effect (QCSE).