531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates-Reference-Cited by-同舟云学术

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

Published:2009-07-17 Issue: Volume:2 Page:082101
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Enya Yohei,Yoshizumi Yusuke,Kyono Takashi,Akita Katsushi,Ueno Masaki,Adachi Masahiro,Sumitomo Takamichi,Tokuyama Shinji,Ikegami Takatoshi,Katayama Koji,Nakamura Takao

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/2/i=8/a=082101/pdf

Reference17 articles.

1. Characteristics of long wavelength InGaN quantum well laser diodes

2. 500 nm electrically driven InGaN based laser diodes

3. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

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