510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=6/a=062201/pdf
Reference7 articles.
1. High-power and wide wavelength range GaN-based laser diodes
2. Blue‐green injection lasers containing pseudomorphic Zn1−xMgxSySe1−ycladding layers and operating up to 394 K
3. Low‐threshold buried‐ridge II‐VI laser diodes
4. Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
5. 500 nm electrically driven InGaN based laser diodes
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