Enhanced Electrical Performance and Bias‐Stress Stability of Solution‐Processed Bilayer Metal Oxide Thin‐Film Transistors-Reference-Cited by-同舟云学术

Enhanced Electrical Performance and Bias‐Stress Stability of Solution‐Processed Bilayer Metal Oxide Thin‐Film Transistors

Published:2022-08-24 Issue:22 Volume:219 Page:2200311
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Sun Qi-Jun¹^ORCID,Wu Jinxuan²,Zhang Meng²,Yuan Yu³,Gao Xu³,Wang Sui-Dong³,Tang Zhenhua¹,Kuo Chi-Ching⁴^ORCID,Yan Yan²

Affiliation:

1. School of Physics and Optoelectric Engineering Guangdong University of Technology Guangzhou 511400 P. R. China

2. College of Electronic and Information Engineering Shenzhen University Shenzhen 518060 China

3. Institute of Functional Nano & Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices Soochow University Suzhou 215123 China

4. Institute of Organic and Polymeric Materials Research and Development Center of Smart Textile Technology National Taipei University of Technology Taipei 710100 Taiwan

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200311

Reference22 articles.

1. Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

2. Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors

3. Resilience of Fluorinated Indium-Gallium-Zinc Oxide Thin-Film Transistor Against Hydrogen-Induced Degradation

4. High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

5. Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment

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