Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure-Reference-Cited by-同舟云学术

Enhancing the Carrier Mobility and Bias Stability in Metal–Oxide Thin Film Transistors with Bilayer InSnO/a-InGaZnO Heterojunction Structure

Published:2024-04-11 Issue:4 Volume:15 Page:512
ISSN:2072-666X
Container-title:Micromachines
language:en
Short-container-title:Micromachines

Author:

Huang Xiaoming¹^ORCID,Chen Chen¹,Sun Fei¹,Chen Xinlei¹,Xu Weizong²,Li Lin³^ORCID

Affiliation:

1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China

2. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China

3. Key Laboratory of Laser Technology and Optoelectronic Functional Materials of Hainan Province, College of Physics and Electronic Engineering, Hainan Normal University, Haikou 571158, China

Abstract

In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TFTs are enhanced. The band alignment of the ITO/a-IGZO heterojunction is analyzed by using X-ray photoelectron spectroscopy (XPS). A conduction band offset (∆EC) of 0.5 eV is observed in the ITO/a-IGZO heterojunction, resulting in electron accumulation in the formed potential well. Meanwhile, the ∆EC of the ITO/a-IGZO heterojunction can be modulated by nitrogen doping ITO (ITON), which can affect the carrier confinement and transport properties at the ITO/a-IGZO heterojunction interface. Moreover, the carrier concentration distribution at the ITO/a-IGZO heterointerface is extracted by means of TCAD silvaco 2018 simulation, which is beneficial for enhancing the electrical performance of ITO/a-IGZO heterojunction TFTs.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

MDPI AG

Link

https://www.mdpi.com/2072-666X/15/4/512/pdf

Reference41 articles.

1. Present status of amorphous In-Ga-Zn-O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010

2. The development of flexible integrated circuits based on thin-film transistors;Myny;Nat. Electron.,2018

3. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications;Zhu;J. Semicond.,2021

4. Thin-film transistors for large-area electronics;Geng;Nat. Electron.,2023

5. Flexible low-temperature polycrystalline silicon thin-film transistors;Chang;Mater. Today Adv.,2020