Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors-Reference-Cited by-同舟云学术

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Solution‐Free UV‐Based Direct Surface Modification of Oxide Films for Self‐Patterned Metal‐Oxide Thin‐Film Transistors

Published:2019-04-04 Issue:5 Volume:5 Page:1900073
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Lee Woobin¹,Choi Seungbeom¹,Kim Jaeyoung¹,Park Sung Kyu²,Kim Yong‐Hoon¹³^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan University Suwon 16419 Korea

2. School of Electrical and Electronic EngineeringChung‐Ang University Seoul 06980 Korea

3. School of Advanced Materials Science and EngineeringSungkyunkwan University Suwon 16419 Korea

Funder

Ministry of Trade, Industry and Energy

Ministry of Science ICT and Future Planning

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201900073

Reference31 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers

5. A Sustainable Approach to Flexible Electronics with Zinc-Tin Oxide Thin-Film Transistors

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. All-Solution-Processed Electronics with Sub-Microscale Resolution and Nanoscale Fidelity Fabricated Via a Humidity-Controlled, Surface Energy-Directed Assembly Process;ACS Nano;2024-07-13

2. Reliability issues of amorphous oxide semiconductor-based thin film transistors;Journal of Materials Chemistry C;2024

3. Enhanced Electrical Performance and Bias‐Stress Stability of Solution‐Processed Bilayer Metal Oxide Thin‐Film Transistors;physica status solidi (a);2022-08-24

4. Analysis of Electronic Characteristics of Plasma-Enhanced Indium Zinc Oxide Thin Film Transistors;Journal of Electrical Engineering & Technology;2022-07-26

5. Analysis of Interface Phenomena for High-Performance Dual-Stacked Oxide Thin-Film Transistors via Equivalent Circuit Modeling;ACS Applied Materials & Interfaces;2021-10-20

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