Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment-Reference-Cited by-同舟云学术

Significant Performance Improvement of Oxide Thin‐Film Transistors by a Self‐Assembled Monolayer Treatment

Published:2020-04-13 Issue:5 Volume:6 Page:1901421
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Cai Wensi¹,Zhang Jiawei¹²,Wilson Joshua¹,Brownless Joseph¹,Park Seonghyun¹,Majewski Leszek¹,Song Aimin¹²^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering University of Manchester Manchester M13 9PL UK

2. Shandong Technology Center of Nanodevices and Integrations State Key Laboratory of Crystal Materials and School of Microelectronics Shandong University Jinan 250100 China

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.201901421

Reference38 articles.

1. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

2. A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

3. Glucose Sensing Using Functionalized Amorphous In–Ga–Zn–O Field-Effect Transistors

4. Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport

5. Influence of the dielectric roughness on the performance of pentacene transistors

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