High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering-Reference-Cited by-同舟云学术

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

Published:2020-07 Issue:34 Volume:30 Page:2003285
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhao Yepin¹,Wang Zhengxu¹,Xu Guangwei¹²,Cai Le¹,Han Tae‐Hee¹³,Zhang Anni¹,Wu Quantan¹,Wang Rui¹,Huang Tianyi¹,Cheng Pei¹,Chang Sheng‐Yung¹,Bao Daqian¹,Zhao Zhiyu¹,Wang Minhuan¹,Huang Yijie¹,Yang Yang¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and California Nano Systems InstituteUniversity of California Los Angeles California 90095 USA

2. School of MicroelectronicsUniversity of Science and Technology of China Hefei Anhui Province 230026 China

3. Division of Materials Science and EngineeringHanyang University Seoul 04763 Republic of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202003285

Reference38 articles.

1. Solution-processed metal-oxide thin-film transistors: a review of recent developments

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3. Organic thin-film transistors: A review of recent advances

4. Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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