Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor-Reference-Cited by-同舟云学术

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Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor

Published:2014-01-20 Issue:1 Volume:4 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Jung Hong Yoon,Kang Youngho,Hwang Ah Young,Lee Chang Kyu,Han Seungwu,Kim Dae-Hwan,Bae Jong-Uk,Shin Woo-Sup,Jeong Jae Kyeong

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep03765.pdf

Reference30 articles.

1. Nomura, K. et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).

2. Kim, M. et al. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper. Appl. Phys. Lett. 90, 212114 (2007).

3. Jeong, J. K., Chung, H.-J., Mo, Y. G. & Kim, H. D. Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors. J. Electrochem. Soc. 155, H873–877 (2008).

4. Jeong, J. K. et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel. Appl. Phys. Lett. 91, 113505 (2007).

5. Ji, K. H. et al. Comparative study on light-induced bias stress instability of IGZO transistors with SiNx and SiO2 Gate Dielectrics. IEEE Electron Device Lett. 31, 1404–1406 (2010).

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