Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

Published:1995-04 Issue:4 Volume:11 Page:396-399
ISSN:0267-0836
Container-title:Materials Science and Technology
language:en
Short-container-title:Materials Science and Technology

Author:

Fernández J. M.,Xie M. H.,Matsumura A.,Mokler S. M.,Zhang J.,Joyce B. A.

Publisher

Informa UK Limited

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1179/mst.1995.11.4.396

Reference20 articles.

1. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition

2. Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si

3. Gas source silicon molecular beam epitaxy using disilane

4. Heterojunction bipolar transistors using Si-Ge alloys

5. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching;Surface Science;2006-06

2. Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation;Applied Physics Letters;2001-11-12

3. Choice of electrolyte for doping profiling in Si by electrochemical C–V technique;Applied Surface Science;2001-03

4. Gas-source molecular beam epitaxy of SiGe virtual substrates: I. Growth kinetics and doping;Semiconductor Science and Technology;2000-03-08

5. Influence of doping on facet formation at the SiO2/Si interface;Surface Science;1999-10

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