Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching-Reference-Cited by-同舟云学术

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Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Published:2006-06 Issue:11 Volume:600 Page:2288-2292
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Zhang J.,Turner S.G.,Chiam S.Y.,Liu R.,Tok E.S.,Wee A.T.S.,Huan A.C.H.,Kelly I.,Mulcahy C.P.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference19 articles.

1. n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony Evaporation

2. Arbitrary doping profiles produced by Sb‐doped Si MBE

3. Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

4. Arsenic doping kinetics in silicon during gas source molecular beam epitaxy

5. Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties

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1. Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application;Nanoscale Research Letters;2020-12

2. Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation;Journal of Applied Physics;2019-07-14

3. Asymmetric double quantum wells with smoothed interfaces;Open Physics;2012-01-01

4. Growth variation effects in SiGe-based quantum cascade lasers;Journal of Optics A: Pure and Applied Optics;2009-03-18

5. Theory and design of quantum cascade lasers in (111)n-type Si/SiGe;Physical Review B;2008-07-11

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