Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1415420
Reference14 articles.
1. Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy
2. Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties
3. Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics
4. Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics
5. B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6and B2H6:B incorporation and electrical properties
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1. Atomic-Scale Patterning of Arsenic in Silicon by Scanning Tunneling Microscopy;ACS Nano;2020-03-06
2. The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2×8)/(2×4);The Journal of Chemical Physics;2004-03-22
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